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DISCRETE SEMICONDUCTORS
DATA SHEET
BFT25 NPN 2 GHz wideband transistor
Product specification File under Discrete Semiconductors, SC14 November 1992
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
DESCRIPTION NPN transistor in a plastic SOT23 envelope. It is primarily intended for use in RF low power amplifiers, such as in pocket phones, paging systems, etc. The transistor features low current consumption (100 A to 1 mA); due to its high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. PINNING PIN 1 2 3 base emitter collector
1 Top view
BFT25
DESCRIPTION Code: V1p
fpage
3
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA SYMBOL VCBO VCEO Ic Ptot fT Cre GUM F PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation transition frequency feedback capacitance up to Ts = 167 C; note 1 IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 C IC = 1 mA; VCE = 1 V; f = 1 MHz; Tamb = 25 C open base CONDITIONS open emitter - - - - 2.3 - 18 3.8 TYP. MAX. 8 5 6.5 30 - 0.45 - - UNIT V V mA mW GHz pF dB dB
maximum unilateral power gain IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 C noise figure IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 C
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector tab. November 1992 2 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current peak collector current total power dissipation storage temperature junction temperature f > 1 MHz up to Ts = 167 C; note 1 CONDITIONS open emitter open base open collector - - - - - - -65 - MIN. 8 5 2 6.5 10 30 150 175 MAX. V V V mA mA mW C C UNIT
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
THERMAL RESISTANCE SYMBOL Rth j-s Note 1. Ts = is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO hFE fT Cc Ce Cre GUM PARAMETER collector cut-off current DC current gain transition frequency collector capacitance emitter capacitance feedback capacitance CONDITIONS IE = 0; VCB = 5 V IC = 10 A; VCE = 1 V IC = 1 mA; VCE = 1 V IC = 1 mA; VCE = 1 V; f = 500 MHz IE = ie = 0; VCB = 0.5 V; f = 1 MHz Ic = ic = 0; VEB = 0; f = 1 MHz IC = 1 mA; VCE = 1 V; f = 1 MHz; Tamb = 25 C - 20 20 1.2 - - - - - - - MIN. - 30 40 2.3 - - - 18 12 5.5 3.8 TYP. PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 167C; note 1
BFT25
THERMAL RESISTANCE 260 K/W
MAX. 50 - - - 0.6 0.5 0.45 - - - -
UNIT nA
GHz pF pF pF dB dB dB dB
maximum unilateral power gain IC = 1 mA; VCE = 1 V; f = 500 MHz; (note 1) Tamb = 25 C IC = 1 mA; VCE = 1 V; f = 800 MHz; Tamb = 25 C
F
noise figure
IC = 0.1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 C IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 C
Note 1. GUM is the maximum unilateral power gain, assuming S12 is zero and S 21 ------------------------------------------------------------- dB. G UM = 10 log 2 2 1 - S 11 1 - S 22
2
November 1992
3
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFT25
MEA908
MEA914
handbook, halfpage
60
1 Cc (pF) 0.8
h FE
40 0.6
0.4 20 0.2
0 10 -3
10 -2
10 -1
0 1 I C (mA) 10 0 2 4 6 8
10 V CB (V)
VCE = 1 V; Tj = 25 C.
IE = ie = 0; f = 1 MHz; Tj = 25 C.
Fig.2
DC current gain as a function of collector current.
Fig.3
Collector capacitance as a function of collector-base voltage.
handbook, halfpage
3
MEA907
MEA909
8 handbook, halfpage F (dB) 6
fT (GHz) 2
4
1 2
0 0 0.5 1 1.5 I C (mA) 2
0 10 -2
10 -1
1
I C (mA)
10
VCE = 1 V; f = 500 MHz; Tj = 25 C.
VCE = 1 V; ZS = opt.; f = 500 MHz; Tamb = 25 C.
Fig.4
Transition frequency as a function of collector current.
Fig.5
Minimum noise figure as a function of collector current.
November 1992
4
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFT25
handbook, full pagewidth
1 0.5 2
0.2
5 10
+j 0 -j 500 0.2 800 MHz 5 0.2 0.5 1 2 5 10
10
200
0.5 1 IC = 1 mA; VCE = 1 V; Tamb = 25 C. Zo = 50 .
2
MEA916
Fig.6 Common emitter input reflection coefficient (S11).
handbook, full pagewidth
90 120 60
150 200
500
800 MHz
30
+
180 1 2 3 0
-
150
30
120 90 IC = 1 mA; VCE = 1 V; Tamb = 25 C.
60
MEA918
Fig.7 Common emitter forward transmission coefficient (S21).
November 1992
5
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFT25
handbook, full pagewidth
90 120 60
150
800 MHz 500 200
30
+
180 0.05 0.1 0.15 0
-
150
30
120 90 IC = 1 mA; VCE = 1 V; Tamb = 25 C.
60
MEA917
Fig.8 Common emitter reverse transmission coefficient (S12).
handbook, full pagewidth
1 0.5 2
0.2
5 10
+j 0 -j 500 0.2 800 MHz 5 0.2 0.5 1 2 5 10 200
10
0.5 1
2
MEA915
IC = 1 mA; VCE = 1 V; Tamb = 25 C. Zo = 50 .
Fig.9 Common emitter output reflection coefficient (S22).
November 1992
6
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
BFT25
SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
November 1992
7
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BFT25
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
November 1992
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